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Freescale Semiconductor Technical Data
Document Number: MMG3002NT1 Rev. 9, 3/2008
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NOT RECOMMENDED FOR NEW DESIGN
The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 40 - 3600 MHz * P1dB: 21 dBm @ 900 MHz * Small - Signal Gain: 20 dB @ 900 MHz * Third Order Output Intercept Point: 37.5 dBm @ 900 MHz * Single Voltage Supply * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
40 - 3600 MHz, 20 dB 21 dBm InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 20 - 16 - 12 21 37.5 2140 MHz 18 - 26 -8 21 36 3500 MHz 14.5 - 16 - 11 18.5 32 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature
(2)
Symbol VCC ICC Pin Tstg TJ
Value 7 400 12 - 65 to +150 150
Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5.2 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 46.5 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2004-2008. All rights reserved.
MMG3002NT1 1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Broadband High Linearity Amplifier
MMG3002NT1
Table 4. Electrical Characteristics (VCC = 5.2 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 19.3 -- -- -- -- -- 95 -- Typ 20 - 16 - 12 21 37.5 4.2 110 5.2 Max -- -- -- -- -- -- 125 -- Unit dB dB dB
NOT RECOMMENDED FOR NEW DESIGN
Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1)
dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3002NT1 2 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Power Output @ 1dB Compression
dBm
Table 5. Functional Pin Description
Pin Number 1 RFin RFout/DC Supply 2 3 Pin Function 2
NOT RECOMMENDED FOR NEW DESIGN
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
MMG3002NT1 RF Device Data Freescale Semiconductor 3
NOT RECOMMENDED FOR NEW DESIGN
Ground
50 OHM TYPICAL CHARACTERISTICS
25 0 S22 TC = 85C 20 - 40C 25C S11, S22 (dB) -10
Gp, SMALL-SIGNAL GAIN (dB)
NOT RECOMMENDED FOR NEW DESIGN
-20 S11 -30 VCC = 5.2 Vdc ICC = 110 mA
15
10 0 1 2 f, FREQUENCY (GHz) 3
VCC = 5.2 Vdc 4
-40 0 1 2 f, FREQUENCY (GHz) 3 4
Figure 2. Small - Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
23 21 Gp, SMALL-SIGNAL GAIN (dB) 19 17 15 13 11 9 10 12 14 16 18 Pout, OUTPUT POWER (dBm) VCC = 5.2 Vdc ICC = 110 mA 20 22 2140 MHz 3500 MHz, C5 = 0.1 pF 2600 MHz P1dB, 1 dB COMPRESSION POINT (dBm) 900 MHz
24 23 22 21 20 19 18 17 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5.2 Vdc ICC = 110 mA
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 160 ICC, COLLECTOR CURRENT (mA) 140 120 100 80 60 40 20 0 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 VCC, COLLECTOR VOLTAGE (V) 42
Figure 5. P1dB versus Frequency
39
36
33 VCC = 5.2 Vdc ICC = 110 mA 100 kHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
30
27
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3002NT1 4 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 42 41 40 39 38 37 36 35 -40 VCC = 5.2 Vdc, f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 25 W Dropping Resistor -20 0 20 40 60 80 100
39
NOT RECOMMENDED FOR NEW DESIGN
36
33
30 f = 900 MHz 100 kHz Tone Spacing 27 5 5.1 5.2 5.3 5.4 VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -40 MTTF (YEARS)
105
104
-50
-60 VCC = 5.2 Vdc ICC = 110 mA f = 900 MHz 100 kHz Tone Spacing
103 -70
-80 5 7 9 11 13 15 17 19 21 Pout, OUTPUT POWER (dBm)
102 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5.2 Vdc, ICC = 110 mA
Figure 10. Third Order Intermodulation versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -20
Figure 11. MTTF versus Junction Temperature
8
-30
NF, NOISE FIGURE (dB)
6
-40
4
-50 VCC = 5.2 Vdc, ICC = 110 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 9 11 13 15 17 19
2 VCC = 5.2 Vdc ICC = 110 mA 0 0 0.5 1 1.5 2 2.5 3 3.5 4 f, FREQUENCY (GHz)
-60
-70 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3002NT1
RF Device Data Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
50 OHM APPLICATION CIRCUIT: 40- 800 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 S21 20 R1 10 0 -10 -20 -30 -40 0 200 400 f, FREQUENCY (MHz) 600 800 S22 S11 VCC = 5.2 Vdc ICC = 110 mA MMG30XX Rev 2 C1 C4 C3 L1 C2
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 0.01 F Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 470 nH Chip Inductor 7.5 W Chip Resistor Part Number C0603C103J5RAC C0603C104J5RAC C0603C105J5RAC BK2125HM471 - T RK73B2ATTE7R5J Manufacturer Kemet Kemet Kemet Taiyo Yuden KOA Speer
Table 9. Supply Voltage versus R1 Values
Supply Voltage R1 Value 6 7.3 7 16 8 25 9 35 10 44 11 53 12 62 V
Note: To provide VCC = 5.2 Vdc and ICC = 110 mA at the device.
MMG3002NT1 6 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 800 - 3400 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30 20 10 0 S22 -10 -20 -30 800 S11 C1 L1 C2 S21
R1 C4 C3
VCC = 5.2 Vdc ICC = 110 mA 2400 2800 3200 3600
MMG30XX Rev 2
1200
1600
2000
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 56 nH Chip Inductor 7.5 W Chip Resistor Part Number C0603C151J5RAC C0603C104J5RAC C0603C105J5RAC HK160856NJ - T RK73B2ATTE7R5J Manufacturer Kemet Kemet Kemet Taiyo Yuden KOA Speer
MMG3002NT1 RF Device Data Freescale Semiconductor 7
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 3400 - 3600 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3 C5
Z4
Z5 C2
Z6
RF OUTPUT
VCC
Z1, Z6 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.086 x 0.058 Microstrip
Z4 Z5 PCB
0.085 x 0.058 Microstrip 0.404 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 20. 50 Ohm Test Circuit Schematic
20 S21 R1 VCC = 5.2 Vdc ICC = 110 mA 0 L1 S22 -10 -20 S11 MMG30XX Rev 2 3300 3400 3500 3600 3700 3800 C1 C5 C2 C4 C3
10
-30 3200
f, FREQUENCY (MHz)
Figure 21. S21, S11 and S22 versus Frequency
Figure 22. 50 Ohm Test Circuit Component Layout
Table 11. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 C5 (1) L1 R1 Description 150 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 0.1 pF Chip Capacitor 39 nH Chip Inductor 7.5 W Chip Resistor Part Number C0603C151J5RAC C0603C104J5RAC C0603C105J5RAC 06035J0R1BS HK160839NJ - T RK73B2ATTE7R5J Manufacturer Kemet Kemet Kemet AVX Taiyo Yuden KOA Speer
1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
MMG3002NT1 8 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM TYPICAL CHARACTERISTICS
Table 12. Common Emitter S - Parameters (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25C, 50 Ohm System)
f MHz 100 S11 |S11| 0.05966 0.07228 0.09041 0.0909 0.08882 0.08508 0.08377 0.08191 0.07982 0.07776 0.0773 0.07677 0.07664 0.07628 0.07619 0.07601 0.07567 0.07642 0.07619 0.07666 0.07678 0.07673 0.07674 0.07628 0.07618 0.07454 0.07373 0.0724 0.06466 0.0646 0.06495 0.0657 0.06599 0.0666 0.06649 0.06637 0.06563 0.06514 0.0641 0.06323 0.06288 0.06195 0.06084 0.05942 176.181 - 178.627 151.476 149.96 145.472 140.833 136.078 131.492 125.857 120.816 115.435 110.371 104.874 100.112 95.73 91.72 87.313 83.036 80.021 76.201 73.008 70.68 68.773 66.216 64.635 62.959 60.65 59.062 48.656 44.563 39.856 35.953 31.949 28.693 25.448 22.687 19.369 15.516 13.294 9.843 6.976 4.218 2.075 - 0.3 |S21| 10.25158 9.96687 10.46556 10.36837 10.30366 10.2505 10.17971 10.10383 10.02536 9.94165 9.85596 9.76098 9.6623 9.56168 9.45426 9.34921 9.23967 9.13144 9.01205 8.90327 8.78013 8.66342 8.53991 8.42251 8.30514 8.18109 8.06498 7.94403 7.85198 7.73641 7.63068 7.52257 7.43591 7.31976 7.22121 7.11782 7.01794 6.91688 6.82126 6.72865 6.63794 6.55483 6.46275 6.37821 S21 174.805 171.111 167.719 164.949 162.017 158.995 156.158 153.293 150.437 147.642 144.898 142.109 139.374 136.692 134.024 131.391 128.792 126.149 123.659 121.137 118.657 116.191 113.779 111.392 109.034 106.673 104.367 102.073 99.72 97.503 95.372 93.247 91.089 88.981 86.872 84.83 82.771 80.824 78.739 76.797 74.849 72.888 70.939 69.013 |S12| 0.07235 0.07071 0.07464 0.07424 0.07406 0.07407 0.07405 0.07365 0.07358 0.07346 0.07336 0.07321 0.07301 0.0729 0.07275 0.07273 0.07257 0.07238 0.07228 0.07218 0.07202 0.0719 0.07178 0.07176 0.07164 0.07149 0.07152 0.07137 0.0715 0.07167 0.07161 0.07165 0.07171 0.07168 0.07176 0.07181 0.07188 0.07197 0.07217 0.07214 0.07234 0.07244 0.07265 0.07275 S12 - 0.722 - 1.821 - 3.053 - 3.553 - 4.277 - 4.934 - 5.7 - 6.307 - 7.037 - 7.676 - 8.2 - 8.911 - 9.464 - 10.069 - 10.618 - 11.184 - 11.821 - 12.312 - 12.88 - 13.474 - 13.93 - 14.519 - 15.062 - 15.551 - 16.115 - 16.539 - 17.114 - 17.565 - 18.187 - 18.755 - 19.217 - 19.614 - 20.239 - 20.731 - 21.241 - 21.685 - 22.233 - 22.678 - 23.218 - 23.632 - 24.15 - 24.689 - 25.273 - 25.755 |S22| 0.04946 0.0953 0.05913 0.08015 0.09694 0.11062 0.12723 0.14156 0.15558 0.1685 0.18177 0.19472 0.20662 0.21833 0.22977 0.24125 0.25232 0.26303 0.27394 0.28332 0.29417 0.30394 0.31393 0.32286 0.33259 0.34127 0.34972 0.35931 0.35762 0.36484 0.37158 0.37821 0.38558 0.39036 0.39732 0.40211 0.40749 0.41306 0.41825 0.42367 0.42905 0.43442 0.43857 0.44419 S22 - 167.612 - 124.668 - 125.378 - 122.814 - 121.876 - 122.007 - 122.555 - 123.436 - 124.8 - 126.796 - 128.506 - 130.47 - 132.663 - 134.835 - 137.084 - 139.685 - 142.257 - 144.736 - 147.346 - 150.042 - 152.767 - 155.358 - 157.992 - 160.483 - 162.981 - 165.377 - 167.823 - 170.82 - 172.845 - 174.751 - 176.697 - 178.85 179.588 177.775 175.992 174.294 172.684 170.97 169.372 167.644 166.014 164.274 162.598 (continued)
NOT RECOMMENDED FOR NEW DESIGN
200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250
MMG3002NT1 RF Device Data Freescale Semiconductor 9
NOT RECOMMENDED FOR NEW DESIGN
150
- 129.396
50 OHM TYPICAL CHARACTERISTICS
Table 12. Common Emitter S - Parameters (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2300 S11 |S11| 0.05808 0.05526 0.05338 0.05054 0.04768 0.04494 0.04239 0.0393 0.03707 0.0346 0.03163 0.02869 0.02667 0.02324 0.02069 0.01861 0.01563 0.01407 0.01296 0.01129 0.01031 0.00977 0.00821 0.0076 0.0074 0.00666 0.00749 - 2.187 - 4.038 - 6.096 - 7.643 - 10.036 - 12.811 - 14.731 - 16.676 - 20.889 - 21.7 - 24.056 - 26.756 - 28.324 - 29.457 - 34.403 - 37.625 - 41.101 - 49.967 - 54.052 - 59.44 - 67.904 - 71.657 - 77.779 - 90.054 - 97.151 - 114.876 - 127.171 |S21| 6.29055 6.20851 6.12256 6.04461 5.96594 5.88833 5.81782 5.74121 5.66538 5.59155 5.51967 5.44631 5.37422 5.30336 5.23613 5.16698 5.09908 5.03148 4.96452 4.89769 4.83271 4.76883 4.707 4.64886 4.59041 4.5319 4.47455 S21 67.098 65.179 63.315 61.45 59.564 57.733 55.868 53.98 52.04 50.247 48.401 46.54 44.74 42.914 41.138 39.322 37.495 35.696 33.935 32.159 30.407 28.702 26.984 25.288 23.575 21.885 20.231 |S12| 0.07295 0.07318 0.07337 0.07359 0.07386 0.07416 0.07435 0.07445 0.0748 0.07499 0.07519 0.0754 0.07563 0.07577 0.07596 0.07624 0.07648 0.0766 0.07684 0.07708 0.07721 0.07742 0.07764 0.07774 0.07797 0.07819 0.07843 S12 - 26.316 - 26.813 - 27.387 - 27.903 - 28.462 - 29.19 - 29.754 - 30.312 - 31.053 - 31.654 - 32.344 - 33.048 - 33.749 - 34.431 - 35.209 - 35.917 - 36.648 - 37.389 - 38.12 - 38.894 - 39.663 - 40.479 - 41.116 - 41.964 - 42.707 - 43.538 - 44.293 |S22| 0.44756 0.45231 0.45571 0.46063 0.46419 0.4681 0.47249 0.47601 0.47991 0.48371 0.48777 0.49144 0.4961 0.50017 0.5054 0.50901 0.51431 0.51844 0.52333 0.52814 0.53368 0.53765 0.54299 0.54702 0.55121 0.55593 0.55935 S22 160.879 157.425 155.679 153.884 152.005 150.142 148.126 146.214 144.147 142.183 140.072 138.081 136.001 133.872 131.91 129.855 127.844 125.818 123.86 121.891 120.096 118.206 116.357 114.75 113.11 111.522
NOT RECOMMENDED FOR NEW DESIGN
2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600
MMG3002NT1 10 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
2350
159.11
1.7 7.62 0.305 diameter
NOT RECOMMENDED FOR NEW DESIGN
5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 23. Recommended Mounting Configuration
MMG3002NT1 RF Device Data Freescale Semiconductor 11
NOT RECOMMENDED FOR NEW DESIGN
3.48
2.49
PACKAGE DIMENSIONS
NOT RECOMMENDED FOR NEW DESIGN
MMG3002NT1 12 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
RF Device Data Freescale Semiconductor
MMG3002NT1
13
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
14
MMG3002NT1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
NOT RECOMMENDED FOR NEW DESIGN
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 7 8 9 Date Mar. 2007 July 2007 Mar. 2008 * * Description Corrected and updated Part Numbers in Tables 8, 10 and 11, Component Designations and Values, to RoHS compliant part numbers, p. 6 - 8 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 12 - 14. Case updated to add missing dimension for Pin 1 and Pin 3.
* Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5
* Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 9, 10
MMG3002NT1 RF Device Data Freescale Semiconductor 15
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 010 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
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MMG3002NT1
Rev. 16 9, 3/2008 Document Number: MMG3002NT1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN

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